参数资料
型号: MB85R1001ANC-GE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 1/16页
文件大小: 0K
描述: IC FRAM 1MBIT 150NS 48TSOP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 1M (128K x 8)
速度: 150ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFSOP(0.488",12.40mm 宽)
供应商设备封装: 48-TSOP
包装: 托盘
其它名称: 865-1168
FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00003-1v0-E
Memory FRAM
1 M Bit (128 K × 8)
MB85R1001A
■ DESCRIPTIONS
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072
words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
process technologies.
The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001A can be used for 10 10 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E 2 PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
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Bit configuration
Read/write endurance
Operating power supply voltage
Operating temperature range
Data retention
Package
: 131,072 words × 8 bits
: 10 10 times
: 3.0 V to 3.6 V
: ? 40 ° C to + 85 ° C
: 10 years ( + 55 ° C)
: 48-pin plastic TSOP (1)
Copyright?2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
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