参数资料
型号: MB85R1001ANC-GE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 3/16页
文件大小: 0K
描述: IC FRAM 1MBIT 150NS 48TSOP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 1M (128K x 8)
速度: 150ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFSOP(0.488",12.40mm 宽)
供应商设备封装: 48-TSOP
包装: 托盘
其它名称: 865-1168
MB85R1001A
■ BLOCK DIAGRAM
A0
FRAM Array
131,072 x 8
A16
int W E
Col u mn Decoder
S/A
CE2
CE1
W E
OE
■ FUNCTIONAL TRUTH TABLE
intOE
I/O1 to I/O 8
I/O 8
I/O1
Operation Mode
CE1
CE2
WE
OE
I/O 1 to I/O 8
Supply Current
H
X
X
X
Standby Precharge
X
L
X
X
Hi-Z
Standby
(I SB )
X
X
H
H
H
Read
L
H
L
Data Output
Read
(Pseudo-SRAM, OE control* 1 )
L
H
H
Operation
H
(I CC )
Write
L
L
H
Data Input
Write
(Pseudo-SRAM, WE control* 2 )
L
H
H
Note: L = V IL , H = V IH , X can be either V IL or V IH , Hi-Z = High Impedance
: Latch address and latch data at falling edge, : Latch address and latch data at rising edge
*1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read.
*2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write.
DS501-00003-1v0-E
3
相关PDF资料
PDF描述
MB85R1002ANC-GE1 IC FRAM 1MBIT 150NS 48TSOP
MB85R256FPFCN-G-BNDE1 IC FRAM 256KBIT 150NS 28TSOP
MB85RC128PNF-G-JNE1 IC FRAM 128KBIT 400KHZ 8SOP
MB85RC16PNF-G-JNE1 IC FRAM 16KBIT 1MHZ 8SOP
MB85RC16VPNF-G-JNE1 IC FRAM 16KBIT 400KHZ 8SOP
相关代理商/技术参数
参数描述
MB85R1001PFTN 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8)
MB85R1001PFTN-GE1 制造商:FUJITSU 功能描述:IC FRAM 1MB SMD TSOP48 制造商:FUJITSU 功能描述:IC, FRAM, 1MB, SMD, TSOP48
MB85R1002 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16)
MB85R1002_07 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16)
MB85R1002_09 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K × 16)