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参数资料
| 型号： | MB85R1001ANC-GE1 |
| 厂商： | Fujitsu Semiconductor America Inc |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | IC FRAM 1MBIT 150NS 48TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | FRAM（Ferroelectric RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFSOP（0.488"，12.40mm 宽） |
| 供应商设备封装： | 48-TSOP |
| 包装： | 托盘 |
| 其它名称： | 865-1168 |
MB85R1001A
■ POWER ON/OFF SEQUENCE
V CC
CE2
3.0 V
V IH (Min)
1.0 V
V IL (Max)
0 V
CE1
t PD
CE2 ≤ 0.2 V
CE1 > V CC × 0. 8 *
CE1 : Don ' t Care
t R
t PU
CE1 > V CC × 0. 8 *
CE1
V CC
CE2
3.0 V
V IH (Min)
1.0 V
V IL (Max)
0 V
* : CE1 (Max) < V CC + 0.5 V
Notes: ? Use either of CE1 or CE2, or both for disable control of the device.
? Because turning the power-on from an intermediate level cause malfunction, when the
power is turned on, V CC is required to be started from 0 V.
? If the device does not operate within the specified conditions of read cycle, write cycle,
power on/off sequence, memory data can not be guaranteed.
? When turning the power on or off, it is recommended that CE2 is connected to ground to
prevent unexpected writing.
(within recommended operating conditions)
Parameter
CE1 level hold time for Power OFF
CE1 level hold time for Power ON
Power supply rising time
Symbol
t PD
t PU
t R
Min
85
85
0.05
Value
Typ
?
?
?
Max
?
?
200
Unit
ns
ns
ms
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to hold the data written prior to the IR reflow.
10
DS501-00003-1v0-E
相关PDF资料 |
PDF描述 |
|---|---|
| MB85R1002ANC-GE1 | IC FRAM 1MBIT 150NS 48TSOP |
| MB85R256FPFCN-G-BNDE1 | IC FRAM 256KBIT 150NS 28TSOP |
| MB85RC128PNF-G-JNE1 | IC FRAM 128KBIT 400KHZ 8SOP |
| MB85RC16PNF-G-JNE1 | IC FRAM 16KBIT 1MHZ 8SOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85R1001PFTN | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001PFTN-GE1 | 制造商:FUJITSU 功能描述:IC FRAM 1MB SMD TSOP48 制造商:FUJITSU 功能描述:IC, FRAM, 1MB, SMD, TSOP48 |
| MB85R1002 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16) |
| MB85R1002_07 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16) |
| MB85R1002_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K × 16) |
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