参数资料
型号: MB85R1001ANC-GE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 4/16页
文件大小: 0K
描述: IC FRAM 1MBIT 150NS 48TSOP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 1M (128K x 8)
速度: 150ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFSOP(0.488",12.40mm 宽)
供应商设备封装: 48-TSOP
包装: 托盘
其它名称: 865-1168
MB85R1001A
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Rating
Max
Unit
Power Supply Voltage*
Input Pin Voltage*
Output Pin Voltage*
Operating Temperature
Storage Temperature
V CC
V IN
V OUT
T A
T STG
? 0.5
? 0.5
? 0.5
? 40
? 40
+ 4.0
V CC + 0.5 ( ≤ 4.0)
V CC + 0.5 ( ≤ 4.0)
+ 85
+ 125
V
V
V
° C
° C
* : All voltages are referenced to VSS = 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Power Supply Voltage*
High Level Input Voltage*
Low Level Input Voltage*
Operating Temperature
Symbol
V CC
V IH
V IL
T A
Min
3.0
V CC × 0.8
? 0.5
? 40
Value
Typ
3.3
?
?
?
Max
3.6
V CC + 0.5( ≤ 4.0)
+ 0.6
+ 85
Unit
V
V
V
° C
* : All voltages are referenced to VSS = 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
4
DS501-00003-1v0-E
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