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参数资料
| 型号： | MB9AF314MPMC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PQFP80 |
| 封装： | 0.50 MM PITCH, PLASTIC, LQFP-80 |
| 文件页数： | 25/114页 |
| 文件大小： | 1357K |
| 代理商： | MB9AF314MPMC |
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ATmega48PA/88PA/168PA [DATASHEET]
9223F–AVR–04/14
18
8.3.1
Data Memory Access Times
This section describes the general access timing concepts for internal memory access. The internal data SRAM access is
Figure 8-4. On-chip Data SRAM Access Cycles
8.4
EEPROM Data Memory
The Atmel ATmega48PA/88PA/168PA contains 256/512/512 bytes of data EEPROM memory. It is organized as a separate
data space, in which single bytes can be read and written. The EEPROM has an endurance of at least 100,000 write/erase
cycles. The access between the EEPROM and the CPU is described in the following, specifying the EEPROM address
registers, the EEPROM data register, and the EEPROM control register.
Section 28. “Memory Programming” on page 251 contains a detailed description on EEPROM programming in SPI or
parallel programming mode.
8.4.1
EEPROM Read/Write Access
The EEPROM access registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 8-2 on page 22. A self-timing function, however, lets the user
software detect when the next byte can be written. If the user code contains instructions that write the EEPROM, some
precautions must be taken. In heavily filtered power supplies, VCC is likely to rise or fall slowly on power-up/down. This
causes the device for some period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See Section 8.4.2 “Preventing EEPROM Corruption” on page 19 for details on how to avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed. Refer to the description of the
EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is executed. When the
EEPROM is written, the CPU is halted for two clock cycles before the next instruction is executed.
clk
CPU
T1
Data
RD
WR
Address valid
Compute Address
Next Instruction
Write
Read
Memory Access Instruction
Address
T2
T3
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相关代理商/技术参数 |
参数描述 |
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| MB9AF314MPMC-G-JNE1 | 制造商:FUJITSU 功能描述:MCU 32BIT CORTEX-M3 FM3 80LQFP |
| MB9AF314NABGL-GE1 | 制造商:FUJITSU 功能描述: |
| MB9AF314NAPF-G-JNE1 | 功能描述:IC MCU 32BIT 256KB FLASH 100QFP 制造商:cypress semiconductor corp 系列:FM3 MB9A310A 包装:托盘 零件状态:在售 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:40MHz 连接性:CSIO，EBI/EMI，I2C，LIN，UART/USART，USB 外设:DMA，LVD，POR，PWM，WDT I/O 数:83 程序存储容量:256KB（256K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:32K x 8 电压 - 电源（Vcc/Vdd）:2.7 V ~ 5.5 V 数据转换器:A/D 16x12b 振荡器类型:内部 工作温度:-40°C ~ 105°C（TA） 封装/外壳:100-BQFP 供应商器件封装:100-PQFP（20x14） 标准包装:66 |
| MB9AF314NAPMC-G-JNE2 | 功能描述:ARM? Cortex?-M3 FM3 MB9A310A Microcontroller IC 32-Bit 40MHz 256KB (256K x 8) FLASH 100-LQFP (14x14) 制造商:cypress semiconductor corp 系列:FM3 MB9A310A 包装:托盘 零件状态:有效 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:40MHz 连接性:CSIO，EBI/EMI，I2C，LIN，UART/USART，USB 外设:DMA，LVD，POR，PWM，WDT I/O 数:83 程序存储容量:256KB（256K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:32K x 8 电压 - 电源（Vcc/Vdd）:2.7 V ~ 5.5 V 数据转换器:A/D 16x12b 振荡器类型:内部 工作温度:-40°C ~ 105°C（TA） 封装/外壳:100-LQFP 供应商器件封装:100-LQFP（14x14） 标准包装:90 |
| MB9AF314NBGL-GE1 | 制造商:FUJITSU 功能描述: 制造商:FUJITSU 功能描述:MCU 32BIT CORTEX-M3 FM3 112BGA 制造商:FUJITSU 功能描述:MCU, 32BIT, CORTEX-M3, FM3, 112BGA 制造商:FUJITSU 功能描述:MCU, 32BIT, CORTEX-M3, FM3, 112BGA, Controller Family/Series:ARM Cortex-M3, Core 制造商:FUJITSU 功能描述:MCU, 32BIT, CORTEX-M3, FM3, 112BGA, Controller Family/Series:ARM Cortex-M3, Core Size:32bit, No. of I/O's:83, Supply Voltage Min:2.7V, Supply Voltage Max:5.5V, Digital IC Case Style:BGA, No. of Pins:112, Program Memory Size:256KB, , RoHS Compliant: Yes |
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