参数资料
型号: MBM29DL161TD-70PFTR-E1
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封装: PLASTIC, REVERSE, TSOP-48
文件页数: 30/80页
文件大小: 565K
代理商: MBM29DL161TD-70PFTR-E1
MBM29DL16XTD/BD-70/90
Retired Product DS05-20874-8E_July 12, 2007
36
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ7 or by the Toggle Bit I
(DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address
while DQ6 can be read from any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
Extended Command
(1) Fast Mode
MBM29DL16XTD/BD has Fast Mode function. This mode dispenses with the initial two unclock cycles
required in the standard program command sequence by writing Fast Mode command into the command
register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in
standard program command. (Do not write erase command in this mode.) The read operation is also executed
after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command
register. The first cycle must contain the bank address. (Refer to “(8) Embedded ProgramTM Algorithm for
Fast Mode” in
■FLOW CHART.) The VCC active current is required even CE = VIH during Fast Mode.
(2) Fast Programming
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
“(8) Embedded ProgramTM Algorithm for Fast Mode” in
■FLOW CHART.)
(3) Extended Sector Group Protection
In addition to normal sector group protection, the MBM29DL16XTD/BD has Extended Sector Group
Protection as extended function. This function enable to protect sector group by forcing VID on RESET pin
and write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control
timing for control pins. The extended sector group protection requires VID on RESET pin only. With this
condition, the operation is initiated by writing the set-up command (60h) into the command register. Then,
the sector group addresses pins (A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A1, A0) = (0, 1, 0) should
be set to the sector group to be protected (recommend to set VIL for the other addresses pins), and write
extended sector group protection command (60h). A sector group is typically protected in 250
μs. To verify
programming of the protection circuitry, the sector group addresses pins (A19, A18, A17, A16, A15, A14, A13 and
A12) and (A6, A1, A0) = (0, 1, 0) should be set and write a command (40h). Following the command write, a
logical “1” at device output DQ0 will produce for protected sector in the read operation. If the output data is
logical “0”, please repeat to write extended sector group protection command (60h) again. To terminate the
operation, it is necessary to set RESET pin to VIH. (Refer to “(17) Extended Sector Group Protection Timing
Diagram” in
■TIMING DIAGRAM and “(7) Extended Sector Group Protection Algorithm” in ■FLOW CHART.)
(4) CFI (Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and host system software
interrogation handshake which allows specific vendor-specified software algorithms to be used for entire
families of devices. This allows device-independent, JEDEC ID-independent, and forward-and backward-
compatible software support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. The bank address
should be set when writing this command. Then the device information can be read from the bank, and an
相关PDF资料
PDF描述
MBM29LV651UE-90TN 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
MBM29LV800TA-12PFTR-X 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
MBM29PL32BM10TN-E1 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
MBM29PL32TM90TN-E1 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
MBN400GR12A 400 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
MBM29DL161TD-90PBT 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161TD-90PFTN 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161TD-90PFTR 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161TE 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2MX8/1MX16) BIT Dual Operation
MBM29DL161TE-12 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation