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参数资料
| 型号： | MBM29DL161TD-70PFTR-E1 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, REVERSE, TSOP-48 |
| 文件页数： | 37/80页 |
| 文件大小： | 565K |
| 代理商： | MBM29DL161TD-70PFTR-E1 |
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MBM29DL16XTD/BD-70/90
Retired Product DS05-20874-8E_July 12, 2007
42
tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status
of the operation. (Refer to “(4) Toggle Bit Algorithm” in “
■ FLOW CHART”.)
Toggle Bit Status Table
*1 : Successive reads from the erasing or erase-suspend sector will cause DQ2 to toggle.
*2 : Reading from the non-erase suspend sector address will indicate logic “1” at the DQ2 bit.
RY/BY
Ready/Busy
The MBM29DL16XTD/BD provide a RY/BY open-drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/
write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase
commands. If the MBM29DL16XTD/BD are placed in an Erase Suspend mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to “(10) RY/BY Timing Diagram during Program/Erase
Operations” and “(11) RESET, RY/BY Timing Diagram” in
■TIMING DIAGRAM for a detailed timing diagram.
The RY/BY pin is pulled high in standby mode.
Since this is an open-drain output, the pull-up resistor needs to be connected to VCC; multiples of devices may
be connected to the host system via more than one RY/BY pin in parallel.
Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL16XTD/BD devices. When
this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed at DQ0
to DQ15. When this pin is driven low, the devices operate in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin
becomes the lowest address bit and DQ8 to DQ14 bits are tri-stated. However, the command bus cycle is always
an 8-bit operation and hence commands are written at DQ0 to DQ7 and the DQ8 to DQ15 bits are ignored. Refer
to “(12) Timing Diagram for Word Mode Configuration” and “(13) Timing Diagram for Byte Mode Configuration”
and “(14) BYTE Timing Diagram for Write Operations” in
■TIMING DIAGRAM for the timing diagram.
Data Protection
The MBM29DL16XTD/BD are designed to offer protection against accidental erasure or programming caused
by spurious system level signals that may exist during power transitions. During power up the devices
automatically reset the internal state machine in the Read mode. Also, with its control register architecture,
alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command
sequences.
The devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up
and power-down transitions or system noise.
Mode
DQ7
DQ6
DQ2
Program
DQ7
Toggle
1
Erase
0
Toggle
Toggle*1
Erase-Suspend Read
(Erase-Suspended Sector)
1
Toggle
Erase-Suspend Program
DQ7
Toggle
1*2
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相关代理商/技术参数 |
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| MBM29DL161TD-90PBT | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161TD-90PFTN | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161TD-90PFTR | 制造商:SPANSION 制造商全称:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL161TE | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL161TE-12 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
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