参数资料
型号: MBM29F800TA-70PFTN-E1
厂商: SPANSION LLC
元件分类: PROM
英文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封装: PLASTIC, TSOP1-48
文件页数: 34/49页
文件大小: 693K
代理商: MBM29F800TA-70PFTN-E1
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
3
s
s FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low Vcc write inhibit
≤ 3.2 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Hardware RESET pin
Resets internal state machine to the read mode
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Temporary sector unprotection via the RESET pin.
* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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