参数资料
型号: MC56F8356MFVE
厂商: Freescale Semiconductor
文件页数: 52/178页
文件大小: 0K
描述: IC DSP 16BIT 60MHZ 144-LQFP
标准包装: 60
系列: 56F8xxx
核心处理器: 56800E
芯体尺寸: 16-位
速度: 60MHz
连通性: CAN,EBI/EMI,SCI,SPI
外围设备: POR,PWM,温度传感器,WDT
输入/输出数: 62
程序存储器容量: 264KB(132K x 16)
程序存储器类型: 闪存
RAM 容量: 10K x 16
电压 - 电源 (Vcc/Vdd): 2.25 V ~ 3.6 V
数据转换器: A/D 16x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 144-LQFP
包装: 托盘
配用: MC56F8367EVME-ND - EVAL BOARD FOR MC56F83X
AC Electrical Characteristics
56F8356 Technical Data, Rev. 13
Freescale Semiconductor
145
Preliminary
10.3 AC Electrical Characteristics
Tests are conducted using the input levels specified in Table 10-5. Unless otherwise specified,
propagation delays are measured from the 50% to the 50% point, and rise and fall times are measured
between the 10% and 90% points, as shown in Figure 10-1.
Figure 10-1 Input Signal Measurement References
Figure 10-2 shows the definitions of the following signal states:
Active state, when a bus or signal is driven, and enters a low impedance state
Tri-stated, when a bus or signal is placed in a high impedance state
Data Valid state, when a signal level has reached VOL or VOH
Data Invalid state, when a signal level is in transition between VOL and VOH
Figure 10-2 Signal States
10.4 Flash Memory Characteristics
Table 10-12 Flash Timing Parameters
Characteristic
Symbol
Min
Typ
Max
Unit
Program time1
1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual
for details. Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Pro-
gram Flash module, as it contains two interleaved memories.
Tprog
20
μs
Erase time2
Terase
20
ms
Mass erase time
Tme
100
ms
VIH
VIL
Fall Time
Input Signal
Note: The midpoint is VIL + (VIH – VIL)/2.
Midpoint1
Low
High
90%
50%
10%
Rise Time
Data Invalid State
Data1
Data2 Valid
Data
Tri-stated
Data3 Valid
Data2
Data3
Data1 Valid
Data Active
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