参数资料
型号: MC56F8356MFVE
厂商: Freescale Semiconductor
文件页数: 74/178页
文件大小: 0K
描述: IC DSP 16BIT 60MHZ 144-LQFP
标准包装: 60
系列: 56F8xxx
核心处理器: 56800E
芯体尺寸: 16-位
速度: 60MHz
连通性: CAN,EBI/EMI,SCI,SPI
外围设备: POR,PWM,温度传感器,WDT
输入/输出数: 62
程序存储器容量: 264KB(132K x 16)
程序存储器类型: 闪存
RAM 容量: 10K x 16
电压 - 电源 (Vcc/Vdd): 2.25 V ~ 3.6 V
数据转换器: A/D 16x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 144-LQFP
包装: 托盘
配用: MC56F8367EVME-ND - EVAL BOARD FOR MC56F83X
Power Consumption
56F8356 Technical Data, Rev. 13
Freescale Semiconductor
165
Preliminary
3.
Equivalent resistance for the ESD isolation resistor and the channel select mux; 500 ohms
4.
Sampling capacitor at the sample and hold circuit. Capacitor C1 is normally disconnected from the input and is only
connected to it at sampling time; 1pf
Figure 10-23 Equivalent Circuit for A/D Loading
10.18 Power Consumption
This section provides additional detail which can be used to optimize power consumption for a given
application.
Power consumption is given by the following equation:
A, the internal [static component], is comprised of the DC bias currents for the oscillator, PLL, leakage
current, and voltage references. These sources operate independently of processor state or operating
frequency.
B, the internal [state-dependent component], reflects the supply current required by certain on-chip
resources only when those resources are in use. These include RAM, Flash memory and the ADCs.
C, the internal [dynamic component], is classic C*V2*F CMOS power dissipation corresponding to the
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V2*F, although simulations on two
of the IO cell types used on the device reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change. Table 10-25 provides coefficients for calculating power dissipated
in the IO cells as a function of capacitive load. In these cases:
TotalPower =
Σ((Intercept +Slope*Cload)*frequency/10MHz)
Total power =
A: internal [static component]
+B: internal [state-dependent component]
+C: internal [dynamic component]
+D: external [dynamic component]
+E: external [static]
Table 10-25 IO Loading Coefficients at 10MHz
Intercept
Slope
PDU08DGZ_ME
1.3
0.11mW / pF
PDU04DGZ_ME
1.15mW
0.11mW / pF
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