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参数资料
| 型号： | MC9RS08KA1CSCR |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 62/136页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8-BIT 1K FLASH 8-SOIC |
| 产品培训模块： | Mechatronics USBSpyder08 Discovery Kit RS08KA2 Low-End Microcontroller Series MC9RS08KA8 Microcontroller |
| 标准包装： | 1 |
| 系列： | RS08 |
| 核心处理器： | RS08 |
| 芯体尺寸： | 8-位 |
| 速度： | 10MHz |
| 外围设备： | LVD，POR，WDT |
| 输入/输出数： | 4 |
| 程序存储器容量： | 1KB（1K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 63 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 5.5 V |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 产品目录页面： | 726 (CN2011-ZH PDF) |
| 其它名称： | MC9RS08KA1CSCRDKR |
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Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
Freescale Semiconductor
31
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF. (Prior to
the data writing operation, the PAGESEL register must be configured correctly to map the high
page accessing window to the any Flash locations).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time tme.
7. Clear the MASS bit.
8. Wait for a time, tnvh1.
9. Clear the HVEN bit.
10. After time, trcv, the memory can be accessed in read mode again.
11. Remove external VPP.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during an erase or program sequence.
These operations must be performed in the order shown, but other unrelated
operations may occur between the steps.
4.6.4
Security
The MC9RS08KA2 Series includes circuitry to help prevent unauthorized access to the contents of Flash
memory. When security is engaged, Flash is considered a secure resource. The RAM, direct-page registers,
and background debug controller are considered unsecured resources. Attempts to access a secure memory
location through the background debug interface, or whenever BKGDPE is set, are blocked (reads return
all 0s).
Security is engaged or disengaged based on the state of a nonvolatile register bit (SECD) in the FOPT
register. During reset, the contents of the nonvolatile location NVOPT are copied from Flash into the
working FOPT register in high-page register space. A user engages security by programming the NVOPT
location, which can be done at the same time the Flash memory is programmed. Notice the erased state
(SECD = 1) makes the MCU unsecure. When SECD in NVOPT is programmed (SECD = 0), next time
the device is reset via POR, internal reset, or external reset, security is engaged. In order to disengage
security, mass erase must be performed via BDM commands and followed by any reset.
The separate background debug controller can still be used for registers and RAM access. Flash mass erase
is possible by writing to the Flash control register that follows the Flash mass erase procedure listed in
Section 4.6.3, “Flash Mass Erase Operation,” via BDM commands.
Security can always be disengaged through the background debug interface by following these steps:
1. Mass erase Flash via background BDM commands or RAM loaded program.
2. Perform reset and the device will boot up with security disengaged.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9RS08KA1DB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
| MC9RS08KA1PC | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
| MC9RS08KA1SC | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
| MC9RS08KA2 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
| MC9RS08KA2_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers |
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