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| 型号： | MCZ33800EK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/39页 |
| 文件大小： | 0K |
| 描述： | IC ENGINE CTRL SW/DVR 54-SOIC |
| 标准包装： | 26 |
| 应用： | 自动 |
| 电流 - 电源： | 10mA |
| 电源电压： | 5 V ~ 36 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 54-BSSOP（0.295"，7.50mm 宽）裸露焊盘 |
| 供应商设备封装： | 54-SOICW-EP |
| 包装： | 管件 |
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ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
V DC
V PWR
V DD
V PWR
V DD
-1.5 to 45
-0.3 to 7.0
CS, SI, SO, SCLK, EN, DEFAULT, PWMx, P1, P3, P5, P7
Predriver Drain Voltage (VDSNS1 to VDSNS6)
OSS Output Clamp Energy (OUT3 to OUT8)(Single Pulse)
–
V DSNS
E CLAMP
-0.3 to V DD
-0.3 to 60
30
V DC
V DC
mJ
T Junction = 150°C, I OUT = 0.45A
OSS Output Clamp Energy (OUT1 & OUT2)(Single Pulse)
E CLAMP
45
mJ
T Junction = 150°C, I OUT = 0.45A
CCD1 Output Clamp Energy (Single Pulse)
E CLAMP
75
mJ
T Junction = 150°C, I OUT = 0.45A
CCD2 Output Clamp Energy (Single Pulse)
E CLAMP
25
mJ
T Junction = 150°C, I OUT = 0.45A
OSS Output Continuous Current (OUT1 to OUT8 Steady State)
I OSS_SS
350
mA
T Junction = 150°C
CCD1 Output Clamp Energy (CCD1_REC OUTPUT)
E CLAMP
75
mJ
T Junction = 150°C, I OUT = 1.0 A
Frequency of SPI Operation (V DD = 5.0V) (3)
ESD Voltage (1)
Human Body Model
Machine Model
–
V ESD1
V ESD2
4.0
±2000
±200
MHz
V
THERMAL RATINGS
Power Dissipation (T A = 25 ° C)
Storage Temperature
Operating Case Temperature
Operating Junction Temperature
(2)
T STG
T C
T J
P D
-55 to 150
-40 to 125
-40 to 150
1.7
° C
° C
° C
W
THERMAL RESISTANCE
Thermal Resistance
Junction to Ambient
Between the Die and the Exposed Die Pad
R θ JA
R θ JC
71
1.2
° C/W
Notes
1. ESD data available upon request. All pins tested individually. ESD1 testing is performed in accordance with the Human Body Model
(AEC-Q100-002). and the Machine Model (AEC-Q100-003).
2. Maximum power dissipation at T J =150 ° C junction temperature with no heat sink used.
3.
This parameter is guaranteed by design but is not production tested.
33800
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
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