参数资料
型号: MG400V1US51A
元件分类: IGBT 晶体管
英文描述: 400 A, 1700 V, N-CHANNEL IGBT
封装: MODULE-7
文件页数: 2/7页
文件大小: 116K
代理商: MG400V1US51A
Dec.2005
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching
time
Forward voltage
Reverse recovery time
Sense
Thermal resistance
IGES
ICES
VGE(off)
VCE(sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
VF
trr
ISES
IC(SEN-START)
VSEN
Rth(j-c)
VGE = ±20V, VCE = 0
VCE = 1700V, VGE = 0
IC = 400mA, VCE = 5V
IC = 400A, Tj = 25°C
VCE = 10V, VGE = 0, f = 1MHz
Inductive load
VCC = 900V
IC = 400A
VGE = ±15V
RG = 2
(Note 1)
IF = 400A, VGE = 0
IF = 400A, VGE = –15V, di/dt = 1500A/s
(Note 1)
VSEN – E = 40V, VCE = 0, VGE = 0
VGE = 15V, VSE = 14.8V
(Note 2)
VGE = 15V, IC = 2400A
(Note 2)
Transistor stage
Diode stage
1700
±20
40
400
800
400
800
2750
150
–40 ~ 125
4000 (AC 1 minute)
2/3
3
TC = 25°C
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
MAXIMUM RATINGS (Ta = 25°C)
Symbol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Sense-emitter voltage
Collector
current
Forward
current
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw
torque
Conditions
Unit
Ratings
V
A
W
°C
V
N m
VCES
VGES
VSES
IC
ICP
IF
IFM
PC
Tj
Tstg
Vlsol
±500
4.0
8.0
4.5
1.0
5.5
0.6
200
13.2
0.045
0.125
nA
mA
V
pF
s
V
s
nA
A
V
°C/W
3.2
51200
0.14
0.07
0.21
0.49
0.28
0.77
4.0
0.3
4.0
1050
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Unit
DC
1ms
DC
1ms
Terminal (M4/M6)
Mounting
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Sense leakage current
Sense start current
Sense voltage
相关PDF资料
PDF描述
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