参数资料
型号: MG400V1US51A
元件分类: IGBT 晶体管
英文描述: 400 A, 1700 V, N-CHANNEL IGBT
封装: MODULE-7
文件页数: 6/7页
文件大小: 116K
代理商: MG400V1US51A
Dec.2005
MITSUBISHI IGBT MODULES
MG400V1US51A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
104
103
2
3
5
7
101
102
100
08
12
16
4
SW time - RG
SWITCHING
TIME
(ns)
GATE RESISTANCE RG (
)
SW time - IC
ton
td(off)
toff
td(on)
tf
tr
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
IC = 400A
VGE =
±15V
103
102
2
3
5
7
2
3
5
7
2
3
5
7
101
100
0
200
300
400
100
SWITCHING
TIME
(ns)
COLLECTOR CURRENT IC (A)
td(off)
toff
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
RG = 2
VGE =
±15V
ton
td(on)
tf
103
100
101
102
08
12
16
4
SW loss - RG
SWITCHING
LOSS
E
on
,E
off
(mJ)
GATE RESISTANCE RG (
)
102
7
5
3
2
7
5
3
2
101
100
0
200
300
400
100
SW loss - IC
SWITCHING
LOSS
E
on
,E
off
(mJ)
COLLECTOR CURRENT IC (A)
Eoff
Eon
103
7
5
3
2
7
5
3
2
102
101
08
12
16
4
Irr, trr - RG
PEAK
REVERSE
RECOVERY
CURRENT
I
rr
(A)
REVERSE
RECOVERY
TIME
t
rr
(ns)
GATE RESISTANCE RG (
)
Irr
trr
103
7
5
3
2
7
5
3
2
102
101
0
200
300
400
100
Irr, trr - IF
PEAK
REVERSE
RECOVERY
CURRENT
I
rr
(A)
REVERSE
RECOVERY
TIME
t
rr
(ns)
FORWARD CURRENT IF (A)
Irr
trr
2
3
5
7
2
3
5
7
2
3
5
7
5
3
2
7
5
3
2
7
5
3
2
tr
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
IC = 400A
VGE =
±15V
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
RG = 2
VGE =
±15V
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
IC = 400A
VGE =
±15V
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 900V
RG = 2
VGE =
±15V
相关PDF资料
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