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参数资料
| 型号： | MGB15N35CLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 2/10页 |
| 文件大小： | 250K |
| 代理商： | MGB15N35CLT4G |
MGP15N35CL, MGB15N35CL
http://onsemi.com
10
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D2PAK
CASE 418B03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
S
G
D
T
M
0.13 (0.005)
T
23
1
4
3 PL
K
J
H
V
E
C
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.340
0.380
8.64
9.65
B
0.380
0.405
9.65
10.29
C
0.160
0.190
4.06
4.83
D
0.020
0.035
0.51
0.89
E
0.045
0.055
1.14
1.40
G
0.100 BSC
2.54 BSC
H
0.080
0.110
2.03
2.79
J
0.018
0.025
0.46
0.64
K
0.090
0.110
2.29
2.79
S
0.575
0.625
14.60
15.88
V
0.045
0.055
1.14
1.40
B
M
B
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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MGP15N35CL/D
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相关代理商/技术参数 |
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| MGB15N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
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