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参数资料
| 型号： | MGB15N35CLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 250K |
| 代理商： | MGB15N35CLT4G |
MGP15N35CL, MGB15N35CL
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
0
40
6
10
4
2
I C,
COLLECT
OR
CURRENT
(AMPS)
0
60
20
30
50
8
13
5
7
10000
1000
100
10
1
1.0
0.5
0.0
1.5
2.0
2.5
0
40
6
10
4
2
I C,
COLLECT
OR
CURRENT
(AMPS)
0
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
0
25
20
15
10
2
1.5
1
5
30
0
0.5
2.5
3
3.5
Figure 3. Transfer Characteristics
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. CollectortoEmitter Saturation
Voltage vs. Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
V
CE
,COLLECT
OR
T
O
EMITTER
VOL
TAGE
(VOL
TS)
I C,
COLLECT
OR
CURRENT
(AMPS)
Figure 5. Capacitance Variation
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 6. Threshold Voltage vs. Temperature
TEMPERATURE (°C)
C,
CAP
ACIT
ANCE
(pF)
THRESHOLD
VOL
TAGE
(VOL
TS)
60
0
120
60
40
20
140
180
50
75
25
0
100
25
125
1.0
3.0
0.5
2.0
0.0
3.5
4.0
VGE = 10.0 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
8
13
5
7
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
TJ = 25°C
TJ = 150°C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
VCE = 10 V
TJ = 25°C
TJ = 150°C
TJ = 40°C
4
4.5
5
1.5
150
VGE = 5.0 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
200
80 100
160
50
75
25
0
100
25
125
150
Mean + 4 σ
Mean 4 σ
Mean
IC = 1 mA
Crss
Ciss
Coss
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相关代理商/技术参数 |
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|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
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