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参数资料
| 型号： | MGB15N35CLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 9/10页 |
| 文件大小： | 250K |
| 代理商： | MGB15N35CLT4G |
MGP15N35CL, MGB15N35CL
http://onsemi.com
8
100
10
0.1
1
0.01
COLLECTOREMITTER VOLTAGE (VOLTS)
COLLECT
OR
CURRENT
(AMPS)
COLLECT
OR
CURRENT
(AMPS)
1
100
10
1000
100
10
0.1
1
0.01
1
100
10
1000
DC
t1 = 1 ms, D = 0.05
DC
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
相关PDF资料 |
PDF描述 |
|---|---|
| MGP15N35CLG | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| MGB15N38CLT4 | 15 A, 350 V, N-CHANNEL IGBT |
| MGC15N43CL | 15 A, 460 V, N-CHANNEL IGBT |
| MGDT100100 | PULSE TRANSFORMER FOR MOSFET GATE DRIVE APPLICATION(S) |
| MGF0805A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
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