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参数资料
| 型号： | MGB15N35CLT4G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 7/10页 |
| 文件大小： | 250K |
| 代理商： | MGB15N35CLT4G |
MGP15N35CL, MGB15N35CL
http://onsemi.com
6
250
500
RG, EXTERNAL GATE RESISTANCE (Ω)
750
1000
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 μH
2
4
0
6
8
10
12
14
250
500
SWITCHING
TIME
(μ
S)
Figure 13. Switching Speed vs. External Gate
Resistance
Figure 14. Switching Speed vs. External Gate
Resistance
SWITCHING
TIME
(μ
S)
RG, EXTERNAL GATE RESISTANCE (Ω)
750
1000
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
IC = 10 A
L = 300 μH
2
4
0
6
8
10
12
14
td(off)
tf
td(off)
tf
0.2
0.00001
0.001
0.0001
0.1
10
1
0.01
t,TIME (S)
R(t),
TRANSIENT
THERMAL
RESIST
ANCE
(°
C/W
att)
Single Pulse
110
0.1
0.05
0.02
0.01
100
1000
Duty Cycle = 0.5
0.1
Figure 15. Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient mounted on
fixture in Figure 16)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) TA = P(pk) RθJA(t)
RθJC R(t) for t ≤ 0.2 s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
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