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参数资料
| 型号： | MIXA20W1200MC |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 28 A, 1200 V, N-CHANNEL IGBT |
| 封装： | SIXPACK-18 |
| 文件页数： | 1/6页 |
| 文件大小： | 234K |
| 代理商： | MIXA20W1200MC |
2011 IXYS All rights reserved
1 - 6
20110304b
MIXA20W1200MC
IXYS reserves the right to change limits, test conditions and dimensions.
Six-Pack
XPT IGBT
V
CES
=1200V
I
C25
= 28A
V
CE(sat)=
2.1V
Features:
Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 sec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
SONIC diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and
resonant-mode power supplies
Package:
"ECO-PAC2" standard package
Easy to mount with two screws
Insulated base plate
Soldering pins for PCB mounting
Space and weight savings
Improved temperature and
power cycling capability
High power density
Partname (Marking on product)
MIXA20W1200MC
L9
A5
O9
C1
G10
H10
P9
C5
A1
S18
E5
G14
E1
W18
I14
K14
K10
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| MIXA20WB1200TMH | 28 A, 1200 V, N-CHANNEL IGBT |
| MIXA40WB1200TED | 60 A, 1200 V, N-CHANNEL IGBT |
| MIXA80W1200TED | 120 A, 1200 V, N-CHANNEL IGBT |
| MJ11028.MODR1 | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIXA20W1200TMH | 功能描述:IGBT 模块 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20W1200TML | 功能描述:IGBT 模块 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TED | 功能描述:IGBT 模块 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TMH | 功能描述:IGBT 模块 1200V XPT CBI XPT IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TML | 功能描述:IGBT 模块 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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