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参数资料
| 型号： | MIXA20W1200MC |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 28 A, 1200 V, N-CHANNEL IGBT |
| 封装： | SIXPACK-18 |
| 文件页数： | 2/6页 |
| 文件大小： | 234K |
| 代理商： | MIXA20W1200MC |
2011 IXYS All rights reserved
2 - 6
20110304b
MIXA20W1200MC
IXYS reserves the right to change limits, test conditions and dimensions.
OuputInverterT1-T6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
CES
collector emitter voltage
T
VJ =
25°C
1200
V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
I
C25
I
C80
collector current
T
C =
25°C
T
C =
80°C
28
20
A
P
tot
total power dissipation
T
C =
25°C
100
W
V
CE(sat)
collector emitter saturation voltage
I
C = 16 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.8
2.1
V
V
GE(th)
gate emitter threshold voltage
I
C = 0.6 mA; VGE = VCE
T
VJ =
25°C
5.5
6.0
6.5
V
I
CES
collector emitter leakage current
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.02
0.2
mA
I
GES
gate emitter leakage current
V
GE = ±20 V
500
nA
Q
G(on)
total gate charge
V
CE = 600 V; VGE = 15 V; IC = 15 A
47
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ = 125°C
V
CE = 600 V; IC = 15 A
V
GE = ±15 V; RG = 56 W
70
40
250
100
1.55
1.7
ns
mJ
RBSOA
reverse bias safe operating area
V
GE = ±15 V; RG = 56 W;
T
VJ = 125°C
V
CEK = 1200 V
45
A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE = 900 V; VGE = ±15 V;
T
VJ = 125°C
R
G = 56 W; non-repetitive
60
10
s
A
R
thJC
thermal resistance junction to case
(per IGBT)
1.3
K/W
OutputInverterD1-D6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitve reverse voltage
T
VJ =
25°C
1200
V
I
F25
I
F80
forward current
T
C =
25°C
T
C =
80°C
33
22
A
V
F
forward voltage
I
F = 20 A; VGE = 0 V
T
VJ =
25°C
T
VJ = 150°C
1.95
1.85
2.2
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R = 600 V
di
F /dt = -400 A/s
T
VJ = 125°C
I
F = 20 A; VGE = 0 V
3
20
350
0.7
C
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode)
1.5
K/W
T
C = 25°C unless otherwise stated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIXA20W1200TMH | 功能描述:IGBT 模块 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20W1200TML | 功能描述:IGBT 模块 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TED | 功能描述:IGBT 模块 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TMH | 功能描述:IGBT 模块 1200V XPT CBI XPT IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MIXA20WB1200TML | 功能描述:IGBT 模块 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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