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参数资料
| 型号： | MJD117-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 146K |
| 代理商： | MJD117-1 |
MJD112 MJD117
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
71.4
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
—
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
—
20
Adc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
20
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
—
10
Adc
Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
—
12,000
—
—
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
—
2
3
Vdc
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
—
4
Vdc
Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
—
200
100
pF
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
相关PDF资料 |
PDF描述 |
|---|---|
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117I | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD122-1 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD122-TP | POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117-1G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD117-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD117ITU | 功能描述:两极晶体管 - BJT PNP Si Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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