- 您现在的位置：买卖IC网 > PDF目录95946 > MJD117-1 (ON SEMICONDUCTOR) 2 A, 100 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJD117-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 146K |
| 代理商： | MJD117-1 |
MJD112 MJD117
http://onsemi.com
4
I C
,COLLECT
OR
CURRENT
(AMP)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
520
3
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
100 s
1ms
dc
0.1
1
3
7
10
730
25
T, TEMPERATURE (°C)
0
50
75
100
125
15
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
TC
0.7
5ms
50 70
200
500 s
ACTIVE–REGION SAFE–OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150
_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C,
CAP
ACIT
ANCE
(pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25°C
200
10
50
70
100
0.1
2
6
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相关PDF资料 |
PDF描述 |
|---|---|
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117I | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD122-1 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD122-TP | POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117-1G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD117-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD117ITU | 功能描述:两极晶体管 - BJT PNP Si Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。