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参数资料
| 型号： | MJD50-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 代理商： | MJD50-1 |
MJD47 MJD50
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS – continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS — continued
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
MJD47
(VCE = 500 Vdc, VBE = 0)
MJD50
ICES
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)
hFE
30
10
150
—
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VCE(sat)
—
1
Vdc
Base–Emitter On Voltage
(IC = 1 Adc, VCE = 10 Vdc)
VBE(on)
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
fT
10
—
MHz
Small–Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
—
—
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
Figure 2. Switching Time Equivalent Circuit
APPROX
+11 V
RB
-4 V
t1
SCOPE
VCC
RC
51
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
2.5
0
2
1.5
1
0.5
TA TC
TC
DUTY CYCLE ≈ 2%
APPROX -9 V
t1 ≤ 7 ns
10 < t2 < 500 s
t3 < 15 ns
Vin 0
Cjd << Ceb
Vin
t2
t3
APPROX
+11 V
Vin
TURN-ON PULSE
TA (SURFACE MOUNT)
VEB(off)
TURN-OFF PULSE
TYPICAL CHARACTERISTICS
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| MJD47-1 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD50G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:两极晶体管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
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