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参数资料
| 型号： | MJD50-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 代理商： | MJD50-1 |
MJD47 MJD50
http://onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
MJD47/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
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Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
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Email: ONlit@hibbertco.com
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD47-1 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJD50I | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJD47I | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| MJD50 | 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJDS-G | FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD50G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:两极晶体管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:两极晶体管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
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