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参数资料
| 型号： | MJE15030AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 12/61页 |
| 文件大小： | 408K |
| 代理商： | MJE15030AF |
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MJE15028 MJE15030 MJE15029 MJE15031
3–685
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
VCEO(sus)
120
150
—
Vdc
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031
ICEO
—
0.1
mAdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031
ICBO
—
10
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
10
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
40
20
—
—
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN TO PNP)
hFE
Typ
2
3
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
30
—
MHz
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = hfe ftest.
t, TIME (ms)
0.01
0.05
1.0
2.0
5.0
10
20
50
500
1.0 k
0.1
0.5
0.2
1.0
0.2
0.1
0.05
r(t)
,TRANSIENT
THERMAL
Z
θJC(t) = r(t) RθJC
R
θJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESIST
ANCE
(NORMALIZED)
Figure 2. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
100
200
0.1
0.02
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| MJE15031AS | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15028BS | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15028BA | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15031AN | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15031BG | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE15030G | 功能描述:两极晶体管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-220 |
| MJE15031G | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15032 | 功能描述:两极晶体管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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