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参数资料
| 型号： | MJE15030AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 23/61页 |
| 文件大小： | 408K |
| 代理商： | MJE15030AF |
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MJE15028 MJE15030 MJE15029 MJE15031
3–686
Motorola Bipolar Power Transistor Device Data
20
2.0
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
16
10
0.02
20
120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
I C
,COLLECT
OR
CURRENT
(AMP)
dc
100
s
5.0
10
150
1.0
50
0.1
5ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
8.0
0
Figure 4. Reverse–Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
0
120
140
I C
,COLLECT
OR
CURRENT
(AMP)
5 V
VBE(off) = 9 V
100
110
150
3.0
130
2.0
1.0
VR, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
100
30
10
7.0
5.0
1.5
C,
CAP
ACIT
ANCE
(pF)
3.0
20
50
Figure 6. Small–Signal Current Gain
f, FREQUENCY (MHz)
1.0
3.0
10
20
100
h
fe
,SMALL
SIGNAL
CURRENT
GAIN
2.0
7.0
5.0
0.5
5.0
50
30
10
0.7
NPN
Figure 7. Current Gain–Bandwidth Product
IC, COLLECTOR CURRENT (AMP)
0.5
2.0
60
100
f T
,CURRENT
GAIN–BANDWIDTH
PRODUCT
(MHz)
1.0
10
20
0.1
5.0
90
50
0.2
IC/IB = 10
TC = 25°C
3 V
1.5 V
PNP
(NPN)
(PNP)
VCE = 10 V
IC = 0.5 A
TC = 25°C
Cib (NPN)
Cob (PNP)
100
30
0
10
0 V
Cib (PNP)
Cob (NPN)
相关PDF资料 |
PDF描述 |
|---|---|
| MJE15031AS | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15028BS | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15028BA | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15031AN | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15031BG | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE15030G | 功能描述:两极晶体管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-220 |
| MJE15031G | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15032 | 功能描述:两极晶体管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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