参数资料
型号: MJE15030AF
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 8 A, 150 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 3/61页
文件大小: 408K
代理商: MJE15030AF
2–9
Selector Guide
Motorola Bipolar Power Transistor Device Data
New Product New Product New Product New Product
Table 5. Large Plastic TO–264
Device Type
Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min
NPN
PNP
hFE
Min/Max
@ IC
Amp
ts
s
Max
tf
s
Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25
°C
15
200
MJL3281A
MJL1302A
60/175
0.1
30 typ
200
650/1500
MJL16218
4/11
12
2.5 typ
170
16
250
MJL21194
MJL21193
25/75
8
4
200
New Product New Product New Product New Product
Table 6. Plastic TO–225AA Type (Formerly TO–126 Type)
Device Type
Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min
NPN
PNP
hFE
Min/Max
@ IC
Amp
ts
s
Max
tf
s
Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25
°C
0.3
350
MJE3439
40/160
0.02
15
0.5
150
MJE341
25/200
0.05
15
20.8
200
MJE344
30/300
0.05
15
20.8
250
2N5655
30/250
0.1
3.5 typ
0.24 typ
0.1
10
20
BD157
30/240
0.05
20
300
BD158
30/240
0.05
20
MJE340
MJE350
30/240
0.05
20.8
2N5656
30/250
0.1
3.5 typ
0.24 typ
0.1
10
20
Devices listed in bold, italic are Motorola preferred devices.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340G
(TO–264)
1
3
2
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77
(TO–225AA)
3
1
2
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
相关PDF资料
PDF描述
MJE15031AS 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15028BS 8 A, 120 V, NPN, Si, POWER TRANSISTOR
MJE15028BA 8 A, 120 V, NPN, Si, POWER TRANSISTOR
MJE15031AN 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15031BG 8 A, 150 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE15030G 功能描述:两极晶体管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15031 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15031 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-220
MJE15031G 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15032 功能描述:两极晶体管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2