参数资料
型号: MJE15030AF
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 8 A, 150 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 43/61页
文件大小: 408K
代理商: MJE15030AF
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Index and Cross Reference
1–18
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
BDX83B
MJ3001
3–425
BDX83C
MJ4035
BDX84
MJ2501
3–425
BDX84A
MJ2501
3–425
BDX84B
MJ2501
3–425
BDX84C
MJ4032
BDX91
2N3716
3–12
BDX92
2N3792
3–25
BDX93
2N3716
3–12
BDX94
2N3792
3–25
BDX95
2N5882
3–77
BDX96
2N5880
3–77
BDY29
2N5303
3–54
BDY34
BD787
3–194
BDY37
2N3773
3–21
BDY96
BUX48
3–401
BDY96–1
BUX48
3–401
BDY96/01
BUX48
3–401
BDY97
BUX48
3–401
BDY97–1
BUX48
3–401
BU1008ADF
MJF16018+DIODE
BU1008AF
MJF16018
BU104P
BU406
3–244
BU105
BU208A
3–226
BU108
BU208A
3–226
BU109P
BU407
3–244
BU124
BU426
BU126
BUX48A
3–401
BU134
MJ423
3–419
BU137
MJ16018
3–520
BU157
MJ16018
3–520
BU180
MJE5741
3–640
BU180A
MJE5742
3–640
BU204
BU208A
3–226
BU205
BU208A
3–226
BU205A
BU208A
3–226
BU207
BU208A
3–226
BU208
BU208A
3–226
BU208A
3–226
BU208D
MJF16018+DIODE
BU223
MJ423
3–419
BU223A
MJ423
3–419
BU322
BU323A
3–231
BU322A
BU323A
3–231
BU323
BU323A
3–231
BU323A
3–231
BU323AP
3–235
BU323P
BU323AP
3–235
BU323Z
3–239
BU326A
BU406
3–244
BU407
3–244
BU426
BUV48
3–391
BU426A
BUV48A
3–391
BU433
BUV48
3–391
BU500
BU522
BU522B
3–246
BU522A
BU522B
3–246
BU522B
3–246
BU806
3–249
BU808
BU208A
3–226
BUD43B
3–251
BUD44D2
3–253
BUF420A
MJW18020
BUH100
3–278
BUH150
3–287
BUH50
3–262
BUH51
3–270
BUL146
3–335
BUL146F
3–335
BUL147
3–343
BUL147F
3–343
BUL382
BUL45
3–316
BUL43B
3–304
BUL44
3–296
BUL44D2
3–306
BUL44F
3–296
BUL45
3–316
BUL45D2
3–325
BUL45F
3–316
BUS11
MJE16002
3–688
BUS12
BUX48
3–401
BUS12A
BUX48A
3–401
BUS13
BUX48
3–401
BUS13A
BUX48A
3–401
BUS14
BUX98
BUS14A
BUX98A
BUS46P
MJE16002
3–688
BUS47
BUX48
3–401
BUS47A
BUX48A
3–401
BUS47AP
BUV47A
BUS47P
BUV47
BUS48
BUX48
3–401
BUS48A
BUX48A
3–401
BUS48AP
MJW16010A
3–847
BUS48P
MJW16010A
3–847
BUS50
3–351
BUS52
BUS97
MJ16010
3–512
BUS98
BUX98
3–353
BUS98A
BUX98A
3–353
BUT11AF
3–360
BUT33
3–364
BUT34
3–370
BUT35
BUT56A
BUT90
BUS50
3–351
BUT91
BUS52
BUT92
BUS52
BUV10
BUV10N
BUV10
BUV11
3–376
BUV11N
BUV11
3–376
BUV12
BUV11
3–376
BUV18
BUS50
3–351
BUV19
BUS50
3–351
BUV20
3–379
BUV21
3–382
BUV21N
BUV21
3–382
BUV22
3–385
BUV23
3–388
BUV24
BUX98
BUV25
BUX98A
BUV44
BUX48
3–401
BUV45
BUX48A
3–401
BUV46
相关PDF资料
PDF描述
MJE15031AS 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15028BS 8 A, 120 V, NPN, Si, POWER TRANSISTOR
MJE15028BA 8 A, 120 V, NPN, Si, POWER TRANSISTOR
MJE15031AN 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15031BG 8 A, 150 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE15030G 功能描述:两极晶体管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15031 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15031 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-220
MJE15031G 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15032 功能描述:两极晶体管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2