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参数资料
| 型号： | MJE15030AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 47/61页 |
| 文件大小： | 408K |
| 代理商： | MJE15030AF |
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Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–21
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
FT49
TIP49
3–887
FT50
TIP50
3–887
GE5060
MJ10000
3–433
GE5061
MJ10000
3–433
GE6060
MJ10015
3–461
GE6061
MJ10015
3–461
GE6062
MJ10015
3–461
GE6251
MJ10005
3–439
GE6252
MJ10005
3–439
GE6253
MJ10005
3–439
IR1000
MJ1000
3–423
IR1001
MJ1001
3–423
IR1010
2N6056
3–97
IR1020
MJ3001
3–425
IR2500
MJ2501
3–425
IR2501
MJ2501
3–425
IR3000
MJ3001
3–425
IR3001
MJ3001
3–425
IR3771
2N3771
3–17
IR3772
2N3772
3–17
IR3777
2N3773
3–21
IR401
BUX48A
3–401
IR402
BUX48A
3–401
IR4039
MJ10000
3–433
IR4040
MJ10000
3–433
IR4041
MJ10000
3–433
IR4045
MJ10000
3–433
IR4050
MJ10000
3–433
IR4055
MJ10000
3–433
IR4059
MJ10000
3–433
IR4061
MJ10000
3–433
IR410
MJ410
3–417
IR411
MJ423
3–419
IR413
MJ413
3–419
IR423
MJ423
3–419
IR425
BUX48A
3–401
IR431
MJ423
3–419
IR4502
MJ4502
3–431
IR5000
MJ10000
3–433
IR5001
MJ10000
3–433
IR5060
MJ10000
3–433
IR5061
MJ10000
3–433
IR515
BUV23
3–388
IR516
BUV23
3–388
IR517
2N6251
3–104
IR518
2N6547
3–140
IR519
2N6547
3–140
IR5252
MJ10007
3–445
IR5261
MJ10007
3–445
IR6000
MJ10005
3–439
IR6001
MJ10005
3–439
IR6002
MJ10005
3–439
IR6060
MJ10005
3–439
IR6061
MJ10005
3–439
IR6062
MJ10005
3–439
IR6251
MJ10007
3–445
IR6252
MJ10007
3–445
IR6302
2N5631
3–59
IR640
MJ3001
3–425
IR641
MJ3001
3–425
IR642
2N6578
3–144
IR645
MJ2501
3–425
IR646
MJ2501
3–425
IR647
2N6052
3–93
IR660
MJ410
3–417
IR663
MJ423
3–419
IR665
BU208A
3–226
IR701
BU208A
3–226
IR801
BU208A
3–226
IR802
MJ802
3–421
KDT410
MJ410
3–417
KDT411
MJ423
3–419
KDT413
MJ413
3–419
KDT423
MJ423
3–419
KDT431
MJ423
3–419
KP3946
2N6274
3–108
KP3948
2N6274
3–108
KSA1010
MJE15029
3–684
KSA1220A
MJE350
3–606
KSA614
TIP42B
3–883
KSA940
MJE15031
3–684
KSB546
MJE15031
3–684
KSB596
TIP32B
3–873
KSB601
BDX34C
3–217
KSB707
D45H11
3–411
KSB744
MJE171
3–589
KSB744A
MJE171
3–589
KSB772
MJE171
3–589
KSB794
MJE703
3–612
KSB795
MJE703
3–612
KSB834
TIP32B
3–873
KSC1507
MJE2360T
3–626
KSC1520
MJE3439
3–630
KSC1520A
MJE2360T
3–626
KSC2073
MJE15030
3–684
KSC2233
TIP41C
3–883
KSC2334
MJE15028
3–684
KSC2335
MJE13007
3–667
KSC2517
TIP41C
3–883
KSC2688
MJE3439
3–630
KSC2690
MJE340
3–602
KSC2690A
MJE340
3–602
KSC2752
2N5657
3–63
KSD288
TIP41B
3–883
KSD362
D44H11
3–411
KSD363
MJE15028
3–684
KSD401
MJE15030
3–684
KSD526
TIP31B
3–873
KSD560
BDX33C
3–217
KSD568
D44H11
3–411
KSD569
D44H11
3–411
KSD708
D45H11
3–411
KSD73
D44H8
3–411
KSD794
MJE181
3–589
KSD794A
MJE181
3–589
KSD818
MJW16018
3–520
KSD819
MJW16018
3–520
KSD820
MJW16018
3–520
KSD821
MJW16018
3–520
KSD868
MJW16018
3–520
KSD869
MJW16018
3–520
KSD870
MJW16018
3–520
KSD871
MJW16018
3–520
KSD880
TIP31B
3–873
KSD882
MJE181
3–589
KSD985
MJE803
3–612
相关PDF资料 |
PDF描述 |
|---|---|
| MJE15031AS | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15028BS | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15028BA | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| MJE15031AN | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15031BG | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE15030G | 功能描述:两极晶体管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15031 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-220 |
| MJE15031G | 功能描述:两极晶体管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15032 | 功能描述:两极晶体管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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