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参数资料
| 型号： | MMDF2P02HDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 3.3A 20V 8SOIC |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 588pF @ 16V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MMDF2P02HDR2GOS |
MMDF2P02HD
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (N ote 3)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
20
?
?
?
?
?
25
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 2.0 Adc)
(VGS = 4.5 Vdc, I D = 1.0 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
2.0
1.5
4.0
0.118
0.152
3.0
2.0
?
0.160
0.180
?
Vdc
mV/ ° C
W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
420
588
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
290
116
406
232
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
?
19
38
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DS = 10 Vdc, I D = 2.0 Adc,
V GS = 4.5 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
66
25
37
11
21
45
36
132
50
74
22
42
90
72
Gate Charge
(V DS = 16 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
15
1.2
5.0
4.0
20
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 4)
Reverse Recovery Time
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(V DD = 15 V, I S = 2.0 A,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.5
1.24
38
17
21
0.034
2.1
?
?
?
?
?
Vdc
ns
m C
3. Negative sign for P ? Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.max.
5. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
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