参数资料
型号: MMDF2P02HDR2G
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET P-CH DUAL 3.3A 20V 8SOIC
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 2,500
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 160 毫欧 @ 2A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 588pF @ 16V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: MMDF2P02HDR2GOS
MMDF2P02HD
TYPICAL ELECTRICAL CHARACTERISTICS
4
V GS = 10 V 4.5 V
3.9 V
3.7 V
T J = 25 ° C
4
V DS ≥ 10 V
3
2
3.5 V
3.3 V
3.1 V
3
2
1
2.9 V
2.7 V
1
100 ° C
25 ° C
0
0
0.2
0.4 0.6 0.8
1 1.2
2.5 V
1.4
1.6
1.8
2
0
1.0
1.5 2.0
T J = - 55 ° C
2.5 3.0
3.5
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
I D = 1 A
T J = 25 ° C
0.20
0.16
T J = 25 ° C
V GS = 4.5 V
0.4
0.2
0.12
0.08
10 V
0
0.04
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance versus
Gate ? To ? Source Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
1.6
V GS = 10 V
I D = 2 A
100
V GS = 0 V
T J = 125 ° C
1.4
1.2
10
1.0
0.8
100 ° C
0.6
- 50
- 25
0
25
50
75
100
125
150
1
0
5
10
15
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage Current
versus Voltage
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