参数资料
型号: MMDF3N03HDR2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 2/10页
文件大小: 281K
代理商: MMDF3N03HDR2
MMDF3N03HD
10
Motorola TMOS Power MOSFET Transistor Device Data
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MMDF3N03HD/D
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MMDF3N04HDR2G 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMDF3N06HD 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS
MMDF3N06VL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual