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参数资料
| 型号： | MMDF3N03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 2.8 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 7/10页 |
| 文件大小： | 281K |
| 代理商： | MMDF3N03HDR2 |
MMDF3N03HD
6
Motorola TMOS Power MOSFET Transistor Device Data
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
150
ID = 9 A
250
150
350
100
50
200
300
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
1 ms
100
s
10
s
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0175
0.0710
0.2706
0.5776
0.7086
107.55 F
1.7891 F
0.3074 F
0.0854 F
0.0154 F
Chip
Ambient
Normalized to
θja at 10s.
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