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参数资料
| 型号： | MMDF5N02ZR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 186K |
| 代理商： | MMDF5N02ZR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 12
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
5.0
4.5
40
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction to Ambient
R
θJA
62.5
°C/W
Maximum Temperature for Soldering
TL
260
°C
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
DEVICE MARKING
ORDERING INFORMATION
D5N02Z
Device
Reel Size
Tape Width
Quantity
D5N02Z
MMDF5N02ZR2
13
″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF5N02Z/D
Motorola, Inc. 1997
MMDF5N02Z
DUAL TMOS
POWER MOSFET
5.0 AMPERES
20 VOLTS
RDS(on) = 0.040 OHM
CASE 751–05, Style 11
SO–8
Motorola Preferred Device
Source1
Gate1
Source2
Gate2
1
2
3
4
8
7
6
5
Top View
Drain1
Drain2
D
S
G
REV 1
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