- 您现在的位置：买卖IC网 > PDF目录95978 > MMDF5N02ZR2 (MOTOROLA INC) 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MMDF5N02ZR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 186K |
| 代理商： | MMDF5N02ZR2 |
MMDF5N02Z
6
Motorola TMOS Power MOSFET Transistor Device Data
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
di/dt = 300 A/
s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves de-
fine the maximum simultaneous drain–to–source voltage
and drain current that a transistor can handle safely when
it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC)
of 25
°C. Peak repetitive pulsed power limits are deter-
mined by using the thermal response data in conjunction
with the procedures discussed in AN569, “Transient
Thermal Resistance – General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition
the total power averaged over a complete switching cycle
must not exceed (TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely
used in switching circuits with unclamped inductive
loads. For reliable operation, the stored energy from cir-
cuit inductance dissipated in the transistor while in ava-
lanche must be less than the rated limit and must be
adjusted for operating conditions differing from those
specified. Although industry practice is to rate in terms of
energy, avalanche energy capability is not a constant.
The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
VGS = 12 V
SINGLE PULSE
TC = 25°C
10
0.1
10 ms
1
100
1 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF6N02HDR2 | 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF6N03HDR2 | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF7N02ZR2 | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDJ3N03BJTR2 | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MMDJ3N03BJT | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF6N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
发布紧急采购，3分钟左右您将得到回复。