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参数资料
| 型号： | MMDF5N02ZR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 186K |
| 代理商： | MMDF5N02ZR2 |
MMDF5N02Z
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
2
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.07
0.01
0
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25
°C
100
°C
0.06
8
4
0.02
TJ = 25°C
4
8
1
2
1
1.5
2
2.5
0.04
02
4
8
1
10
0
2.5
5
7.5
15
2.7 V
10
12.5
0
0.02
0.04
6
34
8
6
5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
6
4.5 V
VGS = 2.7 V
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.4
0.8
1.2
1.6
VGS = 4.5 V
ID = 2.5 A
125
75
25
–25
VGS = 0 V
TJ = 125°C
100
°C
1.2
10
2.0 V
1.7 V
1.8 V
4.5 V
VGS = 12 V
ID = 5 A
TJ = 25°C
1.9 V
0.5
0
2
0.01
0.03
0.05
1000
0.8
2.3 V
1.6 V
1.5 V
5
3
7
TJ = 25°C
0.03
0.05
7
35
7
0.06
0.07
0.08
0.2
0.6
1
1.4
0.1
10000
25
°C
17.5
20
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