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参数资料
| 型号： | MMDF3P03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 203K |
| 代理商： | MMDF3P03HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. Dual HDTMOS devices are designed for use in low
voltage, high speed switching applications where power efficiency
is important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also
be used for low voltage motor controls in mass storage products
such as disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
3.0
15
Adc
Apk
Source Current — Continuous @ TA = 25°C
IS
2.5
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)
EAS
450
mJ
Thermal Resistance — Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 10 sec.
TL
260
°C
DEVICE MARKING
D3P03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF3P03HDR2
13
″
12 mm embossed tape
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3P03HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
MMDF3P03HD
DUAL TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 100 mW
Motorola Preferred Device
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF4N01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS |
| MMDF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| MMDF4P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF-4SNB-1 | 制造商:Maxconn 功能描述: |
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