参数资料
型号: MMDF3P03HDR2
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 3/10页
文件大小: 203K
代理商: MMDF3P03HDR2
MMDF3P03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
20
Adc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
0.075
0.12
0.1
0.16
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
6.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc,
Ciss
425
600
pF
Output Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f
1 0 MHz)
Coss
209
300
Transfer Capacitance
f = 1.0 MHz)
Crss
57.2
80
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD =15Vdc
td(on)
11.7
23.4
ns
Rise Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
tr
15.8
31.6
Turn–Off Delay Time
GS
,
ID = 1.0 Adc,
RG =60 )
td(off)
167.3
334.6
Fall Time
RG = 6.0 )
tf
102.6
205.2
Gate Charge
(See Figure 8)
(V
10 Vd
QT
14.8
29.6
nC
(See Figure 8)
(VDS = 10 Vdc,
ID =3 5Adc
Q1
1.7
ID = 3.5 Adc,
VGS = 10 Vdc)
Q2
4.7
GS
)
Q3
3.42
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.9
0.7
1.2
Vdc
Reverse Recovery Time
(I
3 5 Ad
trr
77.4
ns
(IS = 3.5 Adc,
VGS = 0 Vdc
ta
19.9
VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
57.5
Reverse Recovery Stored Charge
S
)
QRR
0.088
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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