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参数资料
| 型号： | MMDF3P03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 203K |
| 代理商： | MMDF3P03HDR2 |
MMDF3P03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2.9 V
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6.0
4.0
5.0
3.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
4.0
2.0
1.0
0
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.8
0.4
0.3
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
1.5
1.0
0.18
0.12
0.10
0.08
0.06
0.04
2.0
9.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (°C)
1.2
0.8
0.6
0.4
0.2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
100
1.0
15
0
I D
,DRAIN
CURRENT
(AMPS)
I
R
2.0
1.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
2.0
2.5
3.0
3.5
4.0
3.0
5.0
6.0
3.0
4.0
5.0
6.0
7.0
4.0
5.5
3.0
4.5
5.0
2.5
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
1.0
10
20
25
10
I DSS
,LEAKAGE
(nA)
1.8
,DRAIN
CURRENT
(AMPS)
D
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
0.5
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.6
1.4
VGS = 10 V
ID = 1.5 A
VGS = 0 V
TJ = 125°C
100
°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 3 A
VDS ≥ 10 V
TJ = –55°C
100
°C
25
°C
TJ = 25°C
2.7 V
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
3.5
0.16
0.14
0.6
0.7
VGS = 10 V
4.1 V
4.5 V
6.0 V
4.3 V
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相关代理商/技术参数 |
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| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF4N01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS |
| MMDF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
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| MMDF-4SNB-1 | 制造商:Maxconn 功能描述: |
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