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参数资料
| 型号： | MMSF2P02ER2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SOP-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 247K |
| 代理商： | MMSF2P02ER2 |
MMSF2P02E
http://onsemi.com
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
24.7
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
2.0
4.7
3.0
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
0.19
0.3
0.25
0.4
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.8
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
340
475
pF
Output Capacitance
Coss
220
300
Transfer Capacitance
Crss
75
150
SWITCHING CHARACTERISTICS (Note 5.)
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 Ω)
td(on)
20
40
ns
Rise Time
tr
40
80
TurnOff Delay Time
td(off)
53
106
Fall Time
tf
41
82
TurnOn Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
13
26
ns
Rise Time
tr
29
58
TurnOff Delay Time
td(off)
30
60
Fall Time
tf
28
56
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
10
15
nC
Q1
1.1
Q2
3.3
Q3
2.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 4.)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
1.5
2.0
Vdc
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
34
64
ns
ta
18
tb
16
Reverse Recovery Stored Charge
QRR
0.035
μC
3. Negative sign for PChannel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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