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参数资料
| 型号： | MMSF2P02ER2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SOP-8 |
| 文件页数： | 6/9页 |
| 文件大小： | 247K |
| 代理商： | MMSF2P02ER2 |
MMSF2P02E
http://onsemi.com
6
TJ, STARTING JUNCTION TEMPERATURE (°C)
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
150
ID = 6 A
200
150
250
100
50
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
Figure 14. Thermal Response
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0022
Ω
0.0210
Ω
0.2587
Ω
0.7023
Ω
0.6863
Ω
108.44 F
3.1413 F
0.3517 F
0.0207 F
0.0020 F
Chip
Ambient
Normalized to θja at 10s.
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
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