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参数资料
| 型号： | MMSF2P02ER2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SOP-8 |
| 文件页数： | 3/9页 |
| 文件大小： | 247K |
| 代理商： | MMSF2P02ER2 |
MMSF2P02E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
3.5 V
10 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2
0
2
3
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
34
5
10
0.3
0.4
0.6
0.1
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GatetoSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
0.2
68
50
0
50
100
150
4
1
0
3.3 V
TJ = 25°C
VGS = 10
2
3
4
1
2.5
3
3.5
4
4.5
0.1
0.4
0.5
0.6
0.3
0.2
0
0.5
1
1.5
2
0
I DSS
,LEAKAGE
(nA)
100
10
04
8
12
20
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2 A
125
75
25
VDS ≥ 10 V
25
°C
100
°C
TJ = 55°C
VGS = 4.5
TJ = 25°C
9
7
0.5
ID = 1 A
TJ = 25°C
16
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
5 V
4.7 V
7 V
VGS = 0 V
TJ = 125°C
100
°C
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