- 您现在的位置：买卖IC网 > PDF目录98028 > MPQ2906 (ON SEMICONDUCTOR) 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 PDF资料下载
参数资料
| 型号： | MPQ2906 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 12/36页 |
| 文件大小： | 374K |
| 代理商： | MPQ2906 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
MPQ2906 MPQ2907 MPQ2907A
2–475
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –10 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –300 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –500 mAdc, VCE = –10 Vdc)
MPQ2907A
hFE
75
100
35
75
100
40
100
20
30
50
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
MPQ2906, MPQ2907
(IC = –500 mA, IB = –500 mA)
MPQ2907A
VCE(sat)
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MPQ2906, MPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MPQ2906, MPQ2907
(IC = –500 mA, IB = –50 mA)
MPQ2907A
VBE(sat)
—
–1.3
–2.6
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = 15 mAdc)
MPQ2907A Only
ton
—
45
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
MPQ2907A Only
toff
—
180
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. Delay and Rise Time
Test Circuit
–30
200
1.0 k
0
–16 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
Figure 2. Storage and Fall Time
Test Circuit
50
200 ns
–6.0
37
1.0 k
0
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME
≤ 2.0 ms
50
200 ns
1N916
+15 V
1.0 k
相关PDF资料 |
PDF描述 |
|---|---|
| MPQ2907 | 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3467 | 1 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3725 | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116 |
| MPQ3762 | 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3798 | 50 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPQ2907 | 功能描述:两极晶体管 - BJT Quad PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPQ2907A | 制造商:CENTRAL SEMICONDUCTOR 功能描述:MPQ Series 60 V 600 mA PNP Through Hole Silicon Quad Transistor - TO-116 |
| MPQ2907A_12 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:nullPNP SILICON QUAD TRANSISTOR |
| MPQ3303 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD SWITCHING TRANSISTOR |
| MPQ3410DJ-AEC1-LF-P | 功能描述:Boost Switching Regulator IC Positive Adjustable 2.5V 1 Output 1.3A 制造商:monolithic power systems inc. 系列:汽车级，AEC-Q100 包装:剪切带（CT） 零件状态:停产 功能:升压 输出配置:正 拓扑:升压 输出类型:可调式 输出数:1 电压 - 输入（最小值）:1.8V 电压 - 输入（最大值）:6V 电压 - 输出（最小值/固定）:2.5V 电压 - 输出（最大值）:6V 电流 - 输出:1.3A 频率 - 开关:550kHz 同步整流器:是 工作温度:-40°C ~ 125°C （TJ） 安装类型:* 封装/外壳:* 供应商器件封装:* 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。