- 您现在的位置：买卖IC网 > PDF目录98028 > MPQ2906 (ON SEMICONDUCTOR) 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 PDF资料下载
参数资料
| 型号： | MPQ2906 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 24/36页 |
| 文件大小： | 374K |
| 代理商： | MPQ2906 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页当前第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
Reliability and Quality Assurance
9–16
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MECHANICAL SHOCK
This test is used to determine the ability of the device to
withstand a sudden change in mechanical stress due to abrupt
changes in motion as seen in handling, transportation, or
actual use.
Typical Test Conditions: Acceleration = 1500 g’s, Orienta-
tion = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5
Common Failure Modes: Open, short, excessive leak-
age, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
Military Reference: MIL–STD–750, Method 2015
MOISTURE RESISTANCE
The purpose of this test is to evaluate the moisture resistance
of components under temperature/humidity conditions typical
of tropical environments.
Typical Test Conditions: TA = –10°C to 65°C, rh = 80%
to 98%, t = 24 hours/cycles, cycle = 10
Common Failure Modes: Parametric shifts in leakage
and mechanical failure
Common Failure Mechanisms: Corrosion or contami-
nants on or within the package materials. Poor package
sealing
Military Reference: MIL–STD–750, Method 1021
SOLDERABILITY
The purpose of this test is to measure the ability of the device
leads/terminals to be soldered after an extended period of
storage (shelf life).
Typical Test Conditions: Steam aging = 8 hours, Flux =
R, Solder = Sn60, Sn63
Common Failure Modes: Pin holes, dewetting, nonwet-
ting
Common Failure Mechanisms: Poor plating, contami-
nated leads
Military Reference: MIL–STD–750, Method 2026
SOLDER HEAT
This test is used to measure the ability of a device to withstand
the temperatures as may be seen in wave soldering
operations. Electrical testing is the endpoint critierion for this
stress.
Typical Test Conditions: Solder Temperature = 260
°C, t
= 10 seconds
Common Failure Modes: Parameter shifts, mechanical
failure
Common Failure Mechanisms: Poor package design
Military Reference: MIL–STD–750, Method 2031
STEADY STATE OPERATING LIFE (SSOL)
The purpose of this test is to evaluate the bulk stability of the
die and to generate defects resulting from manufacturing
aberrations
that
are
manifested
as
time
and
stress–dependent failures.
Typical Test Conditions: TA = 25°C, PD = Data Book
maximum rating, t = 16 to 1000 hours
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Foreign material, crack
die, bulk die, metallization, wire and die bond defects
Military Reference: MIL–STD–750, Method 1026
TEMPERATURE CYCLING (AIR TO AIR)
The purpose of this test is to evaluate the ability of the device
to withstand both exposure to extreme temperatures and
transitions between temperature extremes. This testing will
also expose excessive thermal mismatch between materials.
Typical Test Conditions: TA = –65°C to 200°C, cycle =
10 to 4000
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
Military Reference: MIL–STD–750, Method 1051
THERMAL SHOCK (LIQUID TO LIQUID)
The purpose of this test is to evaluate the ability of the device
to withstand both exposure to extreme temperatures and
sudden transitions between temperature extremes. This
testing will also expose excessive thermal mismatch between
materials.
Typical Test Conditions: TA = 0°C to 100°C, cycle = 20
to 300
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Wire bond, cracked or
lifted die and package failure
Military Reference: MIL–STD–750, Method 1056
VARIABLE FREQUENCY VIBRATION
This test is used to examine the ability of the device to
withstand deterioration due to mechanical resonance.
Typical Test Conditions: Peak acceleration = 20 g’s,
Frequency range = 20 Hz to KHz, t = 48 minutes
Common Failure Modes: Open, short, excessive leak-
age, mechanical failure
Common Failure Mechanisms: Die and wire bonds,
cracked die, package defects
Military Reference: MIL–STD–750, Method 2056
相关PDF资料 |
PDF描述 |
|---|---|
| MPQ2907 | 0.6 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3467 | 1 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3725 | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116 |
| MPQ3762 | 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3798 | 50 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPQ2907 | 功能描述:两极晶体管 - BJT Quad PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPQ2907A | 制造商:CENTRAL SEMICONDUCTOR 功能描述:MPQ Series 60 V 600 mA PNP Through Hole Silicon Quad Transistor - TO-116 |
| MPQ2907A_12 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:nullPNP SILICON QUAD TRANSISTOR |
| MPQ3303 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD SWITCHING TRANSISTOR |
| MPQ3410DJ-AEC1-LF-P | 功能描述:Boost Switching Regulator IC Positive Adjustable 2.5V 1 Output 1.3A 制造商:monolithic power systems inc. 系列:汽车级，AEC-Q100 包装:剪切带（CT） 零件状态:停产 功能:升压 输出配置:正 拓扑:升压 输出类型:可调式 输出数:1 电压 - 输入（最小值）:1.8V 电压 - 输入（最大值）:6V 电压 - 输出（最小值/固定）:2.5V 电压 - 输出（最大值）:6V 电流 - 输出:1.3A 频率 - 开关:550kHz 同步整流器:是 工作温度:-40°C ~ 125°C （TJ） 安装类型:* 封装/外壳:* 供应商器件封装:* 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。