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参数资料
| 型号： | MR256D08BMA45R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 256KB 45NS 48BGA |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 带卷 (TR) |
Timing Specifications
Table 3.4 Write Cycle Timing 1 (W Controlled) 1
MR256D08B
Parameter
Write cycle time 2
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
Write pulse width (G low)
Data valid to end of write
Data hold time
Symbol
t AVAV
t AVWL
t AVWH
t AVWH
t WLWH
t WLEH
t WLWH
t WLEH
t DVWH
t WHDX
Min
45
0
25
25
20
20
15
0
Max
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Write low to data Hi-Z
3
t WLQZ
0
15
ns
Write high to output active 3
Write recovery time
t WHQX
t WHAX
3
12
-
-
ns
ns
1
All writes occur during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus
contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after
W goes low, the output will remain in a high impedance state. After W or E has been brought high, the signal must remain in
steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being asserted
low in a subsequent cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
2
3
This parameter is sampled and not 100% tested. Transition is measured ± 200 mV from the steady-state voltage. At any given
voltage or temperature, t WLQZ (max) < t WHQX (min)
Figure 3.4 Write Cycle Timing 1 (W Controlled)
t AVAV
A (ADDRESS)
E (CHIP ENABLE)
t AVWH
t WLEH
t WHAX
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
Hi-Z
t AVWL
t WLQZ
t WLWH
Hi-Z
t DVWH
Data Valid
t WHQX
t WHDX
Everspin Technologies ? 2011
10
MR256D08B Rev. 3, 12/2011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR256DL08BMA45 | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:托盘 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:348 |
| MR256DL08BMA45R | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:1 |
| MR25B-100R-F | 制造商:RF 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK 制造商:RF Electronics Inc. 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK |
| MR25B-10K0-F | 制造商:RFE INTERNATIONAL INC 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 10K OHM, THROUGH HOLE MOUNT, BULK |
| MR25B-10K2-F | 制造商:RFE International Inc 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 10200 OHM, THROUGH HOLE MOUNT, BULK |
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