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参数资料
| 型号： | MR2A16ATS35CR |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/22页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (256K x 16) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
Freescale Semiconductor
Data Sheet
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
Introduction
Features
Document Number: MR2A16A
Rev. 6, 11/2007
MR2A16A
44-TSOP
Case 924A-02
The MR2A16A is a 4,194,304-bit magnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because t he MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standard center power and ground SRAM
pinout.
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Single 3.3-V power supply
Commercial temperature range (0°C to
70°C), Industrial temperature range ( - 40°C
to 85°C) and Extended temperature range
( - 40°C to 105°C)
Symmetrical high-speed read and write with
fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
The MR2A16A is available in Commercial (0°C to
70°C), Industrial ( - 40°C to 85°C) and Extended
( - 40°C to 105°C) ambient temperature ranges.
? Freescale Semiconductor, Inc., 2004, 2005, 2006, 2007. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2A16AVMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16AVYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVYS35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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