- 您现在的位置：买卖IC网 > Datasheet目录344 > MR2A16ATS35CR (Freescale Semiconductor)IC MRAM 4MBIT 35NS 44TSOP Datasheet资料下载
参数资料
| 型号： | MR2A16ATS35CR |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/22页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (256K x 16) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
Timing Specifications
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled) 1, 2, 3, 4, 5
Parameter
Symbol
Min
Max
Unit
Write cycle
time 6
t AVAV
35
—
ns
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
Write pulse width (G low)
Data valid to end of write
Data hold time
t AVWL
t AVWH
t AVWH
t WLWH
t WLEH
t WLWH
t WLEH
t DVWH
t WHDX
0
18
20
15
15
10
0
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
Write low to data Hi-Z
7, 8, 9
t WLQZ
0
12
ns
Write high to output
Write recovery time
active 7, 8, 9
t WHQX
t WHAX
3
12
—
—
ns
ns
NOTES:
10
1
2
3
4
5
6
7
8
9
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested.
Transition is measured ± 200 mV from steady-state voltage.
At any given voltage or temperature, t WLQZ max < t WHQX min.
MR2A16A Data Sheet, Rev. 6
Freescale Semiconductor
相关PDF资料 |
PDF描述 |
|---|---|
| MR2A16AVMA35R | IC MRAM 4MBIT 35NS 48BGA |
| MR4A08BCYS35R | IC MRAM 16MBIT 35NS 44TSOP |
| MRJ-5385-01 | CONN RCPT 8POS 2GRN 1PORT PCB |
| MRJ548501 | CONN MOD JACK 8P8C R/A GRN/GRN |
| MSC8122ADSE | KIT ADVANCED DEV SYSTEM 8122 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2A16AVMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16AVYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AVYS35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。