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| 型号： | MR256D08BMA45R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 256KB 45NS 48BGA |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 带卷 (TR) |
MR256D08B
2. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any
voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken
to avoid application of any magnetic field more intense than the maximum field intensity specified
in the maximum ratings.
Table 2.1 Absolute Maximum Ratings 1
Parameter
Core Supply voltage 2
I/O Power Supply voltage 2
Symbol
V DD
V DDQ
Value
-0.5 to 4.0
-0.5 to 4.0
Unit
V
V
Voltage on any pin
2
V IN
-0.5 to +4.0 or
V DDQ + 0.5
whichever is less
V
Output current per pin
Package power dissipation 3
Temperature under bias
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
Maximum magnetic field during read or standby
I OUT
P D
T BIAS
T stg
T Lead
H max_write
H max_read
±20
0.600
-10 to 85
-55 to 150
260
2000
8000
mA
W
°C
°C
°C
A/m
A/m
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
All voltages are referenced to V SS .
Power dissipation capability depends on package characteristics and use environment.
1
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
2
3
Everspin Technologies ? 2011
4
MR256D08B Rev. 3, 12/2011
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| MR256DL08BMA45 | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:托盘 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:348 |
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