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参数资料
| 型号： | MR256D08BMA45R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 6/15页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 256KB 45NS 48BGA |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 带卷 (TR) |
Electrical Specifications
MR256D08B
Power Up and Power Down Sequencing
MRAM is protected from write operations whenever V DD is less than V WIDD or V DDQ is less than V WIDDQ . As soon
as V DD exceeds V DD (min) and V DDQ exceeds V DDQ (min), there is a startup time of 2 ms before read or write op-
erations can start. This time allows memory power supplies to stabilize.
The E and W control signals should track V DD on power up to V DD - 0.2 V or V IH (whichever is lower) and remain
high for the startup time. In most systems, this means that these signals should be pulled up with a resis-
tor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E and W
should hold the signals high with a power-on reset signal for longer than the startup time.
During power loss or brownout where either V DD goes below V WIDD or V DDQ goes below V WIDDQ , writes are pro-
tected and a startup time must be observed when power returns above V DD (min) and / or V DDQ .
Figure 2.1 Power Up and Power Down Diagram
V WIDD V DD / V DDQ
V WIDDQ
STARTUP
2 ms
BROWNOUT or POWER LOSS
2 ms
RECOVER
READ/WRITE
INHIBITED
NORMAL
OPERATION
READ/WRITE
INHIBITED
NORMAL
OPERATION
V IH
V IH
E
W
Everspin Technologies ? 2011
6
MR256D08B Rev. 3, 12/2011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR256DL08BMA45 | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:托盘 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:348 |
| MR256DL08BMA45R | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:1 |
| MR25B-100R-F | 制造商:RF 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK 制造商:RF Electronics Inc. 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK |
| MR25B-10K0-F | 制造商:RFE INTERNATIONAL INC 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 10K OHM, THROUGH HOLE MOUNT, BULK |
| MR25B-10K2-F | 制造商:RFE International Inc 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 10200 OHM, THROUGH HOLE MOUNT, BULK |
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