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| 型号： | MR25H10CDF |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 40MHZ 8DFN |
| 标准包装： | 490 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 40MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP，Small Flag（5x6） |
| 包装： | 托盘 |
| 其它名称： | 819-1039 |
MR25H10
3. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to avoid
application of any magnetic field more intense than the field intensity specified in the maximum ratings.
Table 3.1 Absolute Maximum Ratings 1
Symbol
V DD
V IN
I OUT
P D
T BIAS
T stg
T Lead
H max_write
H max_read
Parameter
Supply voltage 2
Voltage on any pin 2
Output current per pin
Package power dissipation 3
Temperature under bias
Storage Temperature
Lead temperature
Maximum magnetic field exposure
Maximum magnetic field exposure
Conditions
Industrial
AEC-Q100 Grade 1
3 minutes max
Write
Read or Standby
Limit
-0.5 to 4.0
-0.5 to V DD + 0.5
±20
0.600
-45 to 95
-45 to 130
-55 to 150
260
12,000
Unit
V
V
mA
W
°C
°C
°C
°C
A/m
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
All voltages are referenced to V SS . The DC value of V IN must not exceed actual applied V DD by more than
Power dissipation capability depends on package characteristics and use environment.
1
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
2
0.5V. The AC value of V IN must not exceed applied V DD by more than 2V for 10ns with I IN limited to less than
20mA.
3
Copyright ? Everspin Technologies 2013
10
MR25H10 Rev. 9, 4/2013
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| MR25H10CDFR | 功能描述:NVRAM 1Mb 3.3V 128Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDC | 功能描述:NVRAM 1Mb 3V 128Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDCR | 功能描述:NVRAM 1Mb 3V 128Kx8 Serial MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDF | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR25H10MDFR | 功能描述:NVRAM 1Mb 3.3V 128Kx8 SPI Pre-Qual Sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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